unisonic technologies co., ltd 2sa1740 pnp silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2009 unisonic technologies co., ltd qw-r208-026.b high voltage driver application ? features *high breakdown voltage. *excellent h fe linearity. lead-free: 2sa1740l halogen-free:2sa1740g ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing 2sa1740-x-ab3-r 2sa1740l-x-ab3-r 2sa1740g-x-ab3-r sot-89 b c e tape reel
2sa1740 pnp silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r208-026,b ? absolute maximum ratings ( ta=25 c ,unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -5 v collector current i c -200 ma collector current (pulse) i cp -400 ma collector power dissipation p c 0.5 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note : absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collect-base breakdown voltage bv cbo i c = -10 a,i e =0 -400 v collect-emitter breakdown voltage bv ceo i c = -1ma,i b =0, r be = -400 v emitter-base breakdown voltage bv ebo i e = -10 a,i c =0 -5 v collector cutoff current i cbo v cb = -300v,i e =0 -0.1 a emitter cutoff current i ebo v eb = -4v,i c =0 -0.1 a dc current gain h fe v ce = -10v, ic= -50ma 60 200 collect-emitter saturation voltage v ce(sat) i c = -50ma,i b = -5ma -0.8 v base-emitter satura tion voltage v be(sat) i c = -50ma,i b = -5ma -1.0 v output capacitance c ob v cb =-30v, f=1mhz 5 pf reverse transfer capacitance c re v cb =-30v,f=1mhz 4 pf gain-bandwidth product f t v ce = -30v,i c = -10ma 70 mhz turn-on time t on see test circuit 0.25 s turn-off time t off see test circuit 5.0 s ? classification of h fe rank d e range 60-120 100-200
2sa1740 pnp silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r208-026,b ? test circuit
2sa1740 pnp silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r208-026,b typical characteristics -20 0 0 -40 -60 -0.8 -1.2 -1.4 collector current vs. base to emitter voltage base to emitter voltage, v be (v) -1.0 -80 -0.2 -0.4 -0.6 -100 -120 v ce =-10v t a = -30 t a =25 t a =70 7 dc current gain vs.collector current 5 2 2 collector current,ic(ma) 3 5 7 100 3 5 7 10 v ce =-10v -1.0 2 3 57 -100 23 5 7 -10 23 t a = -30 t a =25 t a =70 switch time vs. collector current 5 2 collector current,ic( ma) 3 5 7 1.0 7 0.1 357 100 23 57 10 2 3 2 3 5 7 10 5 tstg ton tf v cc =-150v -10ib 1 =10ib 2 =i c collector current vs.collector to emitter voltage 5 2 collector to emitter voltage,v ce (v) 3 5 7 1.0 7 0.1 3 57 100 23 5 7 10 23 5 2 3 5 7 100 2 3 5 7 icp ic 10ms 100ms 1ms dc operation *single pulse ta=25 mounted on ceramic board (250mm 2 *0.8mm) 60 40 20 0 1.0 80 140 120 100 0.8 1.2 1.4 1.6 collector dissipation vs.ambient temperature 0.2 0.4 0.6 0 ambient temperature , ta ( ) mounted on ceramic board (250mm 2 *0.8mm) 160 7 collector to emitter saturati on voltage vs.collector current 5 2 2 collector current,ic( ma) 3 5 7 -1.0 3 5 7 -0.1 ic/i b =10 -1.0 2 3 5 7 -100 23 57 -10 2 t a =25 t a =70 t a =-30
2sa1740 pnp silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r208-026,b ? typical characteristics(cont.) 7 2 collector current,ic(ma) 3 5 7 -1.0 3 5 -1.0 23 57 -100 23 5 7 -10 23 7 base to emitter satura tion vs.collector current ic/i b =10 t a =70 t a = -30 t a =25 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
